Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor
نویسندگان
چکیده
منابع مشابه
Multiferroic iron oxide thin films at room temperature.
Multiferroic behaviour at room temperature is demonstrated in ε-Fe2 O3 . The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2 O3 in novel devices.
متن کاملRoom-Temperature Humidity Sensing Using Graphene Oxide Thin Films
In this article, we report on a room-temperature humidity sensing device using graphene oxide (GO) thin films synthesized by chemical exfoliation. Changes in the device conductivity are measured for varying relative humidity in the experimental chamber. Experiments are carried out for relative humidity varying from 30% to 95%. We observe a difference in the results obtained for low relative hum...
متن کاملDifferences between amorphous indium oxide thin films
inese Materials Res 16/j.pnsc.2013.08.00 : Department of Ma ity 2220 Campus SA Tel.: þ1 847 49 chang@northwester esponsibility of Chin Abstract A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased...
متن کاملFabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth pro...
متن کاملFabrication of Graphene Oxide Thin Films on Transparent Substrate via a Low-Voltage Electrodeposion Technique
Graphene oxide (GO) thin films were simply deposited on fluorine doped tin oxide (FTO) substrate via a low-voltage electrodeposition. The GO and GO thin films were characterized by Zeta Potential, X-ray diffraction, Ultraviolet-Visible spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy and energy dispersive X-ray spectrosc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4939939